A recent study led by Jin-Ke Shi from the School of Information Science and Technology at Dalian Maritime University has shed light on a significant advancement in semiconductor technology, particularly in the realm of 900V silicon carbide (SiC) quasi-vertical double diffusion MOSFETs. Published in ‘IEEE Access,’ this research dives into the reliability of these devices when faced with single-event burnout (SEB), a phenomenon that can severely affect performance in high-energy environments.
So, what’s the big deal? Well, as maritime technology continues to evolve, the need for robust and reliable electronic components is more crucial than ever. The study reveals that the primary culprit behind SEB in traditional SiC devices is the high transient current density and electric field created at the trench gate corner when struck by heavy ions. This can lead to dangerous levels of power dissipation and, ultimately, thermal failure.
To tackle this issue, Shi and his team have proposed a hardened structure called the TB-QVDMOSFET. This innovative design incorporates a buried oxygen layer and a heavily doped N-type current expansion layer, effectively altering the current flow path within the device. By doing so, the researchers have managed to reduce the high current density and power dissipation at critical points, significantly boosting the device’s resilience against SEB. In fact, they reported a remarkable increase in the SEB threshold voltage from 270V to 478V, which is a whopping 77% improvement.
For the maritime sector, this advancement opens up a world of possibilities. With vessels increasingly relying on sophisticated electronic systems for navigation, communication, and automation, ensuring that these systems can withstand the rigors of their environment is paramount. The enhanced reliability of SiC devices means that shipbuilders and operators can expect longer-lasting and more dependable electronic components, ultimately leading to safer and more efficient operations at sea.
As Jin-Ke Shi aptly puts it, “The modification reduces the high current density and power dissipation at the trench corner, thereby significantly enhancing the device’s resistance to SEB.” This kind of innovation not only addresses immediate technical challenges but also sets the stage for future developments in maritime electronics, paving the way for smarter, more resilient vessels.
In a world where every component counts, the implications of this research extend far beyond the lab. As the maritime industry continues to embrace new technologies, the findings of this study could very well be a game-changer, ensuring that the ships of tomorrow are equipped with the best in semiconductor technology. The journey to safer seas just got a boost, thanks to cutting-edge research published in ‘IEEE Access.’
