In a significant stride for maritime electronics, researchers have been delving into the resilience of a promising semiconductor technology, P-type gallium nitride gate high electron mobility transistors (P-GaN HEMTs), under harsh radiation conditions. This work, led by Yong-chang Sun from Dalian Maritime University, sheds light on how these devices behave when exposed to both sudden high-energy particle strikes and prolonged radiation exposure, a critical consideration for maritime applications where electronics must withstand extreme environments.
P-GaN HEMTs are a type of transistor known for their high efficiency and power density, making them attractive for use in maritime electronics, particularly in radar and communication systems. However, their reliability in radiation-rich environments, such as those encountered in space or high-altitude applications, has been a concern. The study, published in *Nuclear Engineering and Technology* (translated from Korean), investigates two primary failure mechanisms: single-event burnout (SEB) and total ionizing dose effect (TID).
In the SEB experiments, the team observed that when the drain-source voltage was set to 350 volts and the devices were irradiated with tantalum ions, the transistors experienced SEB. This is a sudden and catastrophic failure caused by a single high-energy particle strike. Simulations revealed that the local electric field enhancement due to charge buildup and the subsequent charge collection phenomenon, along with increased collisional ionization, were the main culprits behind the device damage.
The TID experiments involved irradiating three groups of samples with different gate voltage biases using cobalt-60 gamma rays. The results showed positive threshold voltage shifts and increased gate leakage current. “We believe that electron and hole trapping at the P-GaN/AlGaN interface and in the AlGaN barrier layer is the main reason for the threshold voltage shift,” explained Sun. This gradual degradation over time is crucial for understanding the long-term reliability of these devices in radiation environments.
One of the most intriguing findings came from the synergistic experiments, where a group of samples that had undergone TID experiments was subjected to SEE experiments again. The results showed a superposition effect, indicating that the combined impact of both types of radiation can exacerbate device degradation.
For the maritime sector, these findings are particularly relevant. Ships and offshore platforms often operate in environments with high levels of radiation, especially during long voyages or in polar regions. Understanding how P-GaN HEMTs behave under these conditions is crucial for ensuring the reliability of critical electronic systems. The insights gained from this study can guide the design and implementation of more robust semiconductor devices, enhancing the overall resilience of maritime electronics.
Moreover, the commercial implications are substantial. As the maritime industry increasingly adopts advanced electronic systems for navigation, communication, and automation, the demand for reliable and high-performance semiconductor devices will grow. P-GaN HEMTs, with their superior performance characteristics, are poised to play a significant role in this evolution. However, their widespread adoption hinges on demonstrating their reliability in harsh environments, a gap that this research helps to address.
In summary, the work by Yong-chang Sun and his team at Dalian Maritime University provides valuable insights into the behavior of P-GaN HEMTs under radiation stress. By understanding the mechanisms of SEB and TID, and their synergistic effects, the maritime industry can better design and deploy electronic systems that are resilient and reliable, even in the most challenging conditions. This research not only advances the scientific understanding of semiconductor behavior but also opens up new opportunities for the commercial application of P-GaN HEMTs in the maritime sector.